Li原子掺杂C28单分子器件的热自旋输运性质

利用第一性原理对Li原子掺杂C₂₈的分子器件的热自旋输运性质进行了计算。在不同的温度场下,上下自旋分别为Li原子掺杂C₂₈的分子器件中的空穴和电子提供了输运通道,在MJ₁和MJ₃分子器件中,热自旋电流随着温度增加而增大,但在MJ₂分子器件中,热自旋电流先增大再减小。三种分子器件都出现了自旋塞贝克效应,MJ₂还出现了负微分电阻现象,利用费米-狄拉克分布和自旋输运谱对其物理机理进行了解释。根据Li掺杂C₂₈的单分子器件的热自旋输运性质,可设计新的自旋纳米器件。     

Delay of terminal current in systems with abruptly changed Hamiltonian

The current response for the parameter change of a mesoscopic system is a practical issue for future's circuit design. Nowadays most considered cases are various types of bias modulation, while the effect of change of conductor Hamiltonian is seldom addressed. In this paper, we investigate the response of ballistic transport induced by a sudden change of the conductor Hamiltonian. We formulize the terminal current in language of non-equilibrium Green's function. Our method is applied to one-dimensional tight-binding chains and we find that the terminal current has a delay to the Hamiltonian change. The amount of delay is not determined by the velocity of incident electrons in the bias window, but depends on the tight-binding hopping energy γ. The delay of current response at the detecting point away from where the Hamiltonian changes is $C{\gamma }^{?1}$, where C is a constant independent of the system.     

Diffusion Limitations and Translocation Barriers in Atomically Thin Biomimetic Pores

Ionic transport in nano- to sub-nano-scale pores is highly dependent on translocation barriers and potential wells. These features in the free-energy landscape are primarily the result of ion dehydration and electrostatic interactions. For pores in atomically thin membranes, such as graphene, other factors come into play. Ion dynamics both inside and outside the geometric volume of the pore can be critical in determining the transport properties of the channel due to several commensurate length scales, such as the effective membrane thickness, radii of the first and the second hydration layers, pore radius, and Debye length. In particular, for biomimetic pores, such as the graphene crown ether we examine here, there are regimes where transport is highly sensitive to the pore size due to the interplay of dehydration and interaction with pore charge. Picometer changes in the size, e.g., due to a minute strain, can lead to a large change in conductance. Outside of these regimes, the small pore size itself gives a large resistance, even when electrostatic factors and dehydration compensate each other to give a relatively flat—e.g., near barrierless—free energy landscape. The permeability, though, can still be large and ions will translocate rapidly after they arrive within the capture radius of the pore. This, in turn, leads to diffusion and drift effects dominating the conductance. The current thus plateaus and becomes effectively independent of pore-free energy characteristics. Measurement of this effect will give an estimate of the magnitude of kinetically limiting features, and experimentally constrain the local electromechanical conditions.     

Effect of an Al-doped ZnO electron transport layer on the efficiency of inverted bulk heterojunction solar cells

Doping is a widely-implemented strategy for enhancing the inherent electrical properties of metal oxide charge transport layers in photovoltaic devices because higher conductivity of electron transport layer (ETL) can increment the photocurrent by reducing the series resistance. To improve the conductivity of ETL, in this study we doped the ZnO layer with aluminum (Al), then investigated the influence of AZO on the performance of inverted bulk heterojunction (BHJ) polymer solar cells based on poly [[4,8-bis [(2-ethylhexyl)oxy]benzo [1,2-b:4,5-b’]dithiophene-2,6-diyl]-[3-fluoro-2[(2-ethylhexyl)-carbonyl]-thieno-[3,4-b]thiophenediyl ]] (PTB7):[6,6]-phenyl C71 butyric acid methyl ester (PC₇₁BM). The measured conductivity of AZO was ~10⁻³ S/cm, which was two orders of magnitude higher than that of intrinsic ZnO (~10⁻⁵ S/cm). By decreasing the series resistance (R_s) in a device with an AZO layer, the short circuit current (J_sc) increased significantly from 15.663 mA/cm² to 17.040 mA/cm². As a result, the device with AZO exhibited an enhanced power conversion efficiency (PCE) of 8.984%.     

Al2O3衬底无催化剂生长GaN纳米线及其光学性能

采用一种绿色的等离子增强化学气相沉积法,以Al2O3为衬底, Ga金属为镓源, N2为氮源,在不采用催化剂的情况下,成功制备获得了结晶质量良好的GaN纳米线.研究表明,生长温度可显著调控GaN纳米线的形貌,当反应温度为950℃时,生长出的GaN微米片为六边形;当反应温度为1000℃时,生长出了长度为10-20μm的超长GaN纳米线.随着反应时间增加, GaN纳米线的长度增加. GaN纳米线内部存在着压应力,应力大小为0.84 GPa.同时,也进一步讨论了GaN纳米线无催化剂生长机制. GaN纳米线光致发光结果显示, GaN纳米线缺陷较少,结晶质量良好,在360 nm处有一个较为尖锐的本征发光峰,可应用于紫外激光器等光电子器件.本研究结果将为新型光电器件低成本绿色制备提供一个可行的技术方案.     

Crosslinkable high dielectric constant polymer dielectrics for low voltage organic field‐effect transistor memory devices

I n this study, we successfully synthesized water/methanol soluble random copolymers with a high dielectric constant, poly(n‐(hydroxymethyl) acrylamide‐co‐5‐(9‐(5‐(diethylamino)pentyl)?2‐(4‐vinylphenyl)?9H‐fluorene(P(NMA‐co‐F6NSt)), which contained chemical crosslinkable segment (NMA) and hole trapping building block (F6NSt). The feeding molar ratios of two monomers (NMA:F6NSt) were set as 100:0, 95:5, 80:20, and 67:33 for the copolymers of P1 , P2 , P3, and P4 , respectively. The crosslinked P(NMA‐co‐F6NSt) thin film could serve as both dielectric and charge storage layers in organic field‐effect transistor (OFET) memory device and exhibited high k (i.e., 4.91–6.47) characteristics, leading to a low voltage operation and a small power consumption. Devices based on the P1 ‐ P4 dielectrics showed excellent insulating properties and good charge storage performance under a low operating voltage in a range of ±5V because of tightly network structures and well‐dispersed trapping cites. In particular, P3 ‐based memory device exhibited a large memory window of 4.13 V with stable data retention stability over 10⁴ s, a large on/off ratio of 10⁴, and good endurance characteristics as high as 200 cycles. The above results suggested that a high‐performance OFET memory device could be facilely achieved using the novel crosslinkable high‐k copolymers. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016 , 54, 3224–3236     

Proton Order–Disorder Phenomena in a Hydrogen‐Bonded Rhodium–η5‐Semiquinone Complex: A Possible Dielectric Response Mechanism

A newly synthesized one‐dimensional (1D) hydrogen‐bonded (H‐bonded) rhodium(II)–η⁵‐semiquinone complex, [Cp*Rh(η⁵‐p‐HSQ‐Me₄)]PF₆ ([ 1 ]PF₆; Cp*=1,2,3,4,5‐pentamethylcyclopentadienyl; HSQ=semiquinone) exhibits a paraelectric–antiferroelectric second‐order phase transition at 237.1 K. Neutron and X‐ray crystal structure analyses reveal that the H‐bonded proton is disordered over two sites in the room‐temperature (RT) phase. The phase transition would arise from this proton disorder together with rotation or libration of the Cp* ring and PF₆^? ion. The relative permittivity ε_b′ along the H‐bonded chains reaches relatively high values (ca., 130) in the RT phase. The temperature dependence of ¹³C CP/MAS NMR spectra demonstrates that the proton is dynamically disordered in the RT phase and that the proton exchange has already occurred in the low‐temperature (LT) phase. Rate constants for the proton exchange are estimated to be 10^?4–10^?6 s in the temperature range of 240–270 K. DFT calculations predict that the protonation/deprotonation of [ 1 ]⁺ leads to interesting hapticity changes of the semiquinone ligand accompanied by reduction/oxidation by the π‐bonded rhodium fragment, producing the stable η⁶‐hydroquinone complex, [Cp*Rh³⁺(η⁶‐p‐H₂Q‐Me₄)]²⁺ ([ 2 ]²⁺), and η⁴‐benzoquinone complex, [Cp*Rh⁺(η⁴‐p‐BQ‐Me₄)] ([ 3 ]), respectively. Possible mechanisms leading to the dielectric response are discussed on the basis of the migration of the protonic solitons comprising of [ 2 ]²⁺ and [ 3 ], which would be generated in the H‐bonded chain.     

Effects of silica nanoparticle addition on polymer semiconductor wettability and carrier mobility in solution‐processable organic transistors on hydrophobic substrates

The effects of the addition of silica nanoparticles (SNPs) on wettability of regioregular poly(3‐hexylthiophene) (P3HT) organic semiconductor solutions on hydrophobic substrates and the carrier mobility in organic field‐effect transistors (OFETs) made of these films are investigated. The dewetting of films made from P3HT solutions on hydrophobic substrates modified with octadecyltrichlorosilane (ODTS) is markedly suppressed after the addition of SNPs with phenyl surfactants. This enables us to fabricate continuous P3HT/SNPs films with high crystallinity by the conventional spin‐coating technique, leading to higher mobility compared with P3HT FETs fabricated on non‐modified substrates. Moreover, the addition of SNPs with larger diameters compensates for the degradation of mobility associated with the increase in the concentration of SNPs. Solution‐processed P3HT/SNPs FETs on ODTS‐modified substrates exhibit a field‐effect mobility of 1.3 × 10^?2 cm² V^?1 s^?1, which is almost comparable to that of P3HT FETs without SNPs (2.1 × 10^?2 cm² V^?1 s^?1). © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 509–516     

Enhanced magnetoconductivity and electrical property of MWCNT-CdS nanocomposite embedded in polyaniline

PANI/MWCNT-CdS nanocomposites with different content of CdS wt.% has been synthesized by the chemical oxidative in-situ polymerization reaction of aniline in the presence of multi-walled carbon nanotubes (MWCNT). TEM, XRD, FTIR, and TGA studies were done for the structural and thermal characterization of the samples respectively. The particle size of CdS nanoparticles distributes in between 2.7 and 4.8 nm. XRD spectrum reveals that the co-existence of MWCNT, CdS in PANI matrix, where CdS forms a hexagonal structure. TGA result shows that nanocomposite becomes more thermally stable with the increase in CdS content. The dc electrical transport property of PANI/MWCNT-CdS nanocomposites has been investigated within a temperature range 77 ≤ T ≤ 300 K. The dc conductivity follows a 3D variable range hopping (VRH) model. A large magnetoconductivity change (19%) is observed for 2 wt% CdS content in PANI/MWCNT-CdS, which is explained by the wave function shrinkage model.